Title :
A Novel Device Structure For Studying Gate And Channel Edge Effects In IGFET´s
Author :
Serack, J.A. ; Walton, A.J. ; Robertson, J.M.
Author_Institution :
University Of Edinburgh
Keywords :
Aluminum; Computational modeling; Computer simulation; Electric variables; Electrodes; Fabrication; Hot carrier effects; Ice; Testing; Transistors;
Conference_Titel :
Microelectronic Test Structures, 1988. ICMTS. Proceedings of the 1988 IEEE International Conference on
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/ICMTS.1988.672931
