DocumentCode

3163242

Title

A Novel Device Structure For Studying Gate And Channel Edge Effects In IGFET´s

Author

Serack, J.A. ; Walton, A.J. ; Robertson, J.M.

Author_Institution

University Of Edinburgh

fYear

1988

fDate

22-23 Feb. 1988

Firstpage

67

Lastpage

72

Keywords

Aluminum; Computational modeling; Computer simulation; Electric variables; Electrodes; Fabrication; Hot carrier effects; Ice; Testing; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1988. ICMTS. Proceedings of the 1988 IEEE International Conference on

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/ICMTS.1988.672931

Filename

672931