Title :
Notice of Retraction
3-D warpage measurement of silicon wafer
Author :
Wei Zhang ; Fulong Zhu ; Shao Song ; Honghai Zhang ; Sheng liu ; Chuanqion Sun
Author_Institution :
Inst. of Microsyst., HuaZhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
Notice of Retraction
After careful and considered review of the content of this paper by a duly constituted expert committee, this paper has been found to be in violation of IEEE´s Publication Principles.
We hereby retract the content of this paper. Reasonable effort should be made to remove all past references to this paper.
The presenting author of this paper has the option to appeal this decision by contacting TPII@ieee.org.
The warpage measurement of silicon wafers is an important main part in semiconductor industry. Shadow moiré and four-step phase shift technique ware used to obtain the out-of-displacement, and the max warpage of the silicon wafer with the size of 20mm×20mm and 0.5mm thickness can be shown in the 3-D warpage result.
Keywords :
semiconductor device manufacture; semiconductor industry; 3D warpage measurement; four-step phase shift technique; semiconductor industry; shadow moire; silicon wafer; Extraterrestrial measurements; Gratings; Holography; Optical imaging; Optical variables measurement; Semiconductor device measurement; Silicon; Shadow moiré; silicon wafer; warpage;
Conference_Titel :
Artificial Intelligence, Management Science and Electronic Commerce (AIMSEC), 2011 2nd International Conference on
Conference_Location :
Dengleng
Print_ISBN :
978-1-4577-0535-9
DOI :
10.1109/AIMSEC.2011.6010064
