Line edge roughness characterization using nanotubed-AFM and SEM

Author

Shin, J. ; Cerrina, F.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

fYear

2002

fDate

6-8 Nov. 2002

Firstpage

12

Lastpage

13

Abstract

We report the results of line edge roughness (LER) characterization using atomic force microscopy with carbon nanotube (AFM-CNT) and high resolution scanning electron microscopy (SEM). UV-6 has been exposed using next generation lithography (NGL) tools such as extreme ultra-violet (EUVL), electron beam (EBL), and X-ray (XRL). Then the LER behaviors were compared using AFM-CNT and SEM as metrology tools and we conclude that metrology tools should be selected more carefully for specific applications.

Keywords

X-ray lithography; atomic force microscopy; carbon nanotubes; electron beam lithography; scanning electron microscopy; surface topography; ultraviolet lithography; AFM-CNT; EUVL lithography; LER characterization; SEM; X-ray lithography; atomic force microscopy; electron beam lithography; high resolution scanning electron microscopy; line edge roughness characterization; nanotubed-AFM; next generation lithography tools; Acceleration; Atomic force microscopy; Carbon nanotubes; Geometry; Image resolution; Low earth orbit satellites; Low voltage; Metrology; Resists; Scanning electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-031-3

Type

conf

DOI

10.1109/IMNC.2002.1178519

Filename

1178519