Title :
Low Pressure Chemical Vapor Deposition of Ultra-Thin, Pinhole-Free Amorphous Silicon Films
Author :
Khandekar, Anish ; Hull, Jeff ; Joshi, Sachin
Author_Institution :
Micron Technol., Inc., Boise, ID
Abstract :
A method to deposit and characterize ultra-thin (<100 Aring) amorphous silicon on silicon dioxide substrates is described. Two Si precursors, silane and disilane were compared for film continuity, measured in terms of pinhole density. Disilane was found to result in pinhole free films as thin as 45 Aring. The differences in sub-monolayer or island-stage film morphology were used to describe the effects of precursor chemistry on film continuity.
Keywords :
amorphous semiconductors; chemical vapour deposition; elemental semiconductors; semiconductor thin films; silicon; Si; chemical vapor deposition; disilane; island-stage film morphology; pinhole density; silane; silicon dioxide substrates; submonolayer film morphology; ultrathin pinhole-free amorphous silicon films; Amorphous silicon; Chemical technology; Chemical vapor deposition; Chemistry; Density measurement; Etching; Morphology; Semiconductor films; Semiconductor thin films; Substrates;
Conference_Titel :
Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4244-3551-7
Electronic_ISBN :
978-1-4244-3552-4
DOI :
10.1109/WMED.2009.4816139
