Analysis and Optimization of Packaging Structures to Maximize the Thermal Performance of Multi-Finger GaInP/GaAs Collector-Up HBTs

Author

Tseng, Hsien-cheng ; Chen, Jhin-Yuan

Author_Institution

Dept. of Electron. Eng., Kun Shan Univ., Tainan

fYear

2009

fDate

3-3 April 2009

Firstpage

1

Lastpage

4

Abstract

We develop an elaborate finite-element model to analyze packaging structures of multi-finger GalnP/GaAs collector-up HBTs. Novel packaging structures have been designed and evaluated in detail. With careful optimization, the thermal performance can be maximized and the conventional heat-dissipation configuration can be further reduced by 40%. The results demonstrate that thinning the packaging design underneath the GalnP/GaAs collector-up HBT should be feasible for miniaturizing HBT-based high-power-amplifier applications.

Keywords

gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power amplifiers; GaInP-GaAs; finite-element model; high-power-amplifier applications; multi-finger collector-up HBT; packaging structures; Electronic mail; Electronic packaging thermal management; Fingers; Finite element methods; Gallium arsenide; Heterojunction bipolar transistors; Performance analysis; Radio frequency; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on

Conference_Location

Boise, ID

Print_ISBN

978-1-4244-3551-7

Electronic_ISBN

978-1-4244-3552-4

Type

conf

DOI

10.1109/WMED.2009.4816140

Filename

4816140