DocumentCode :
3163819
Title :
Analysis and Optimization of Packaging Structures to Maximize the Thermal Performance of Multi-Finger GaInP/GaAs Collector-Up HBTs
Author :
Tseng, Hsien-cheng ; Chen, Jhin-Yuan
Author_Institution :
Dept. of Electron. Eng., Kun Shan Univ., Tainan
fYear :
2009
fDate :
3-3 April 2009
Firstpage :
1
Lastpage :
4
Abstract :
We develop an elaborate finite-element model to analyze packaging structures of multi-finger GalnP/GaAs collector-up HBTs. Novel packaging structures have been designed and evaluated in detail. With careful optimization, the thermal performance can be maximized and the conventional heat-dissipation configuration can be further reduced by 40%. The results demonstrate that thinning the packaging design underneath the GalnP/GaAs collector-up HBT should be feasible for miniaturizing HBT-based high-power-amplifier applications.
Keywords :
gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power amplifiers; GaInP-GaAs; finite-element model; high-power-amplifier applications; multi-finger collector-up HBT; packaging structures; Electronic mail; Electronic packaging thermal management; Fingers; Finite element methods; Gallium arsenide; Heterojunction bipolar transistors; Performance analysis; Radio frequency; Temperature; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4244-3551-7
Electronic_ISBN :
978-1-4244-3552-4
Type :
conf
DOI :
10.1109/WMED.2009.4816140
Filename :
4816140
Link To Document :
بازگشت