Title :
Electron energy deposition in photoresist: a local view
Author :
Han, G. ; Khan, M. ; Fang, Y. ; Cerrina, F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
The authors examine electron scattering processes in resist materials using a direct Monte Carlo model, combined with a virtual quanta method. They separate the scattering events into four types: elastic, ionization, excitation, and plasmon events. The model is stochastic, in the sense that the electrons travel in free flight between the interactions. This code has the ability to simulate both electron and high energy photon lithographies.
Keywords :
Monte Carlo methods; digital simulation; electron beam lithography; electron energy loss spectra; photolithography; photoresists; plasmons; resists; semiconductor process modelling; stochastic processes; direct Monte Carlo model; elastic events; electron energy deposition; electron lithography; electron scattering processes; excitation events; high energy photon lithography; ionization events; photoresist; plasmon events; resist materials; scattering events; simulation; stochastic model; virtual quanta method; Aerospace materials; Electromagnetic scattering; Electrons; Ionization; Lithography; Monte Carlo methods; Particle scattering; Plasmons; Resists; Stochastic processes;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178530