Freestanding tungsten wires for BM-HET

When carriers are propagated only through intrinsic semiconductor, high-speed transistors can be realized due to reduction of scattering. We proposed hot electron transistor with a buried metallic gate (BM-HET) using double barrier as an emitter. In this device, gate metal buried in intrinsic semiconductor works as Schottky barrier to make attractive potential. Potential of the gate metal modulates the barrier height, resulting in modulation of the emitter current. In this report, we present freestanding wires fabricated by etching after buried growth to reduce a leakage current of BM-HET.