Title :
A Self-Adaptive and PVT Insensitive Clock Distribution Network Design for High-Speed Memory Interfaces
Author :
Lin, Feng Dan ; Keeth, Brent
Author_Institution :
DRAM R&D, Micron Technol., Inc., Boise, ID
Abstract :
A clock distribution network (CDN) insensitive to process, voltage, and temperature (PVT) variations is presented in this paper. Unlike a traditional source-synchronous interface, the CDN uses a current-mode logic (CML) divider and sense- amp-based data receiver for data capture and deserialization. The proposed input path extends its operating range beyond 4- Gb/s/pin without the need for retraining. A unique self-adaptive bias generator based on a Bandgap reference is also disclosed. Simulation data based on the CDN shows a 40% reduction in timing sensitivity for a 100 mV supply voltage change and an 85degC temperature change at 4-Gb/s using a 3-metal, 50-nm DRAM process. Design considerations are also addressed based on power, performance, and complexity.
Keywords :
DRAM chips; clocks; DRAM process; bit rate 4 Gbit/s; current-mode logic divider; data capture; data deserialization; distribution network design; high-speed memory interfaces; process voltage and temperature variations; sense-amp-based data receiver; size 50 nm; source-synchronous interface; temperature 85 degC; voltage 100 mV; Circuits; Clocks; Delay; Latches; Random access memory; Research and development; Routing; Temperature sensors; Timing; Voltage;
Conference_Titel :
Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4244-3551-7
Electronic_ISBN :
978-1-4244-3552-4
DOI :
10.1109/WMED.2009.4816147