Title :
Electron optics properties on EB stepper
Author :
Yamada, A. ; Okamoto, K. ; Umemoto, T. ; Shimizu, H. ; Takahashi, S. ; Ikeda, J. ; Kojima, S. ; Yahiro, T. ; Shimizu, S. ; Fujiwara, T. ; Hamashima, M.
Author_Institution :
IC Equip. Div., Nikon Corp., Saitama, Japan
Abstract :
Nikon has been developing electron projection lithography (EPL), which is eminently suitable for 65nm node technologies and beyond. The electron optics (EO) sub-system, which has been collaborated with IBM and Nikon\´s original stage/body, have been integrated into the "EB Stepper". We discuss the following EO properties:- 1. Resolution (deflected sub field and on axis sub fleld) 2. Distortion including sub field distortion (within 250μm square area) and main fleld distortion and 3. Stitching (between subfields).
Keywords :
electron beam lithography; electron optics; 65 nm; EB stepper; EPL; distortion; electron optics properties; electron projection lithography; resolution; stitching; Collaboration; Electron optics; Electrooptic deflectors; Fabrication; Lenses; Lithography; Nonlinear distortion; Optical distortion; Page description languages; Testing;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178539
