Title :
Electron cyclotron resonance-reactive ion etching of III-V semiconductors by cyclic injection of CH/sub 4//H/sub 2//Ar and O/sub 2/
Author :
Haneji, N. ; Segami, G. ; Suzuki, T. ; Arakawa, T. ; Tada, K. ; Shimogaki, Y. ; Nakano, Y.
Author_Institution :
Graduate Sch. of Eng., Yokohama Nat. Univ., Japan
Abstract :
In this study, we introduced constant Ar flow to the cyclic etching in order to remove the alumina layer formed during ashing intervals by the Ar ion etching, and studied the etching conditions for various III-V semiconductor materials. It was demonstrated diat the combination of the cyclic etching with/without constant Ar flow and the continuous etching is useful for etching the device structure containing multi-semiconductor layers.
Keywords :
III-V semiconductors; sputter etching; Al/sub 2/O/sub 3/; Ar; III-V semiconductor; alumina layer; ashing process; constant Ar flow; cyclic etching; cyclic injection; electron cyclotron resonance-reactive ion etching; multilayer structure; Argon; Artificial intelligence; Cyclotrons; Electrons; Etching; III-V semiconductor materials; Indium compounds; Indium phosphide; Resonance; Surface morphology;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178548
