Title :
Transformation of dense contact holes in oxide etching
Author :
Sakamori, S. ; Fujiwara, N. ; Miyatake, H. ; Oikawa, K. ; Yamanaka, M. ; Sasaki, T.
Author_Institution :
ULSI Dev. Center, Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
For the semiconductor fabrication, the advanced photolithography technology of the high resolution by short wavelength, such as ArF, is studied. However, the photo resist used for present ArF lithography is deficient in the resistance for dry etching. In this study, it is investigated that the formation of the dense contact holes with the ArF resist mask.
Keywords :
photoresists; sputter etching; ultraviolet lithography; ArF; ArF resist mask; dense contact hole; dry etching; oxide etching; photolithography technology; photoresist; semiconductor fabrication; Dry etching; Electric resistance; Fabrication; Lithography; Plasma applications; Plasma density; Resists; Rough surfaces; Shape; Surface roughness;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178549
