Title :
Isotropic/anisotropic selective epitaxial growth of Si and SiGe on LOCOS patterned Si (100) substrate by cold wall type UHV-CVD
Author :
Lim, S.-H. ; Song, S. ; Park, T. ; Lee, S.Y. ; Lee, J.-H. ; Yoon, E.
Author_Institution :
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea
Abstract :
In this study, we investigated isotropic/anisotropic selective area growth of the Si and SiGe epitaxial layers at various growth conditions and pattern sizes. Si and SiGe epitaxial layers were selectively grown on LOCOS patterned Si substrates by a cold wall-type ultrahigh vacuum chemical vapor deposition (UHV-CVD) system.
Keywords :
Ge-Si alloys; chemical vapour deposition; elemental semiconductors; oxidation; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; silicon; LOCOS patterned Si(100) substrate; Si; Si epitaxial layer; SiGe; SiGe epitaxial layer; anisotropic growth; cold wall UHV-CVD; isotropic growth; selective epitaxial growth; Anisotropic magnetoresistance; Chemical vapor deposition; Epitaxial growth; Epitaxial layers; Fluid flow; Germanium silicon alloys; Helium; Silicon germanium; Substrates; Temperature;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178550
