Title :
Resist line edge roughness study for next generation lithography: experiment and modeling
Author :
Shin, J. ; Ma, Y. ; Cerrina, F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
We report the results of an experimental and simulation study of the line edge roughness (LER) for resists patterned with next generation lithography tools such as extreme ultraviolet (EUV), electron beam, and x-ray. Poor aerial image contrast (AIC) has been applied intentionally to create rough line edges. The characterization has been performed using atomic force microscopy (AFM) with carbon nanotube tips and high resolution scanning electron microscopy (SEM). Simulation results based on percolation theory are compared with experimental results.
Keywords :
X-ray lithography; atomic force microscopy; resists; scanning electron microscopy; surface topography; ultraviolet lithography; EUV lithography; X ray lithography; atomic force microscopy; carbon nanotube tips; electron beam lithography; high resolution scanning electron microscopy; next generation lithography; percolation theory; poor aerial image contrast; resist line edge roughness; Atomic force microscopy; Carbon nanotubes; Computational modeling; Computer simulation; Electron beams; Lithography; Predictive models; Resists; Scanning electron microscopy; Ultraviolet sources;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178554
