157-nm single layer resists based on main-chain-fluorinated polymers

Fluoropolymers are key materials for single layer resists of 157-nm lithography. We have been studying fluoropolymers to identify their potential for base resins of 157-nm photoresist. New monocyclic fluoropolymer resist which we developed have high optical transparency with an absorption coefficient lower than 1.0/spl mu/m/sup -1/, and non-swelling solubility in standard developer. As the exposed results by 157-nm laser microstepper (numerical aperture = 0.85) using a new fluoropolymer based resist, the 65-nm lines and spaces pattern was obtained at a 200-nm film thickness.