Performance and Operation of Stressed Dual-Gap RF MEMS Varactors

Author

McFeetors, Greg ; Okoniewski, Michal

Author_Institution

Dept. of Electr. & Comput. Eng., Calgary Univ., Alta.

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

1064

Lastpage

1067

Abstract

The design, fabrication and measurement of a continuously tunable RF MEMS capacitor is described. The capacitor´s dual gap height architecture allows for electrostatic tuning with low resistive loss and a large tuning range. A new dual tuning scheme is introduced for use with two voltage sources. This dual tuning, coupled with a stress-induced bridge, is used to reach further device tuning. Measurements indicate a continuously tunable capacitance range of 6.2:1 with a quality factor over 50 at 30GHz for 310fF

Keywords

micromechanical devices; millimetre wave devices; tuning; varactors; 30 GHz; 310 fF; Q factor; continuously tunable RF MEMS capacitor; device tuning; dual gap height architecture allows; dual tuning scheme; electrostatic tuning; stress-induced bridge; stressed dual-gap RF MEMS varactors; Bridge circuits; Capacitors; Electrodes; Electrostatic measurements; Micromechanical devices; Q factor; Radio frequency; Radiofrequency microelectromechanical systems; Tunable circuits and devices; Varactors; Capacitors; Electromechanical Systems (MEMS); Q factor; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281117

Filename

4058007