Autocloning Si-SiO/sub 2/ multilayer deposition by magnetron and ECR sputtering

Author

Takahashi, C. ; Kaneko, T. ; Kohno, M. ; Itomura, D. ; Kurihara, K. ; Yoshihara, H.

Author_Institution

NTT Adv. Technol. Corp., Kanagawa, Japan

fYear

2002

fDate

6-8 Nov. 2002

Firstpage

92

Lastpage

93

Abstract

Autocloning technology based on RF sputtering and sputter-etching (RF bias sputtering) is an unique method of fabricating photonic crystal composed of multilayer film, in which each layer has a wavy shape with sub-micrometer periodicity. Autocloning of Si-SiO/sub 2/ multilayer film is now being researched for optical devices in telecommunications. In practical applications, optical loss reduction is strongly required and improvement of the fabrication process becomes important. We constructed a new deposition apparatus equipped with two kinds of two sputtering sources (planar magnetron (PM) type and ECR type) for the fabrication of photonic crystal of three-dimensional periodic structure. We investigated deposition characteristics of Si and SiO/sub 2/ on wavy-shape substrate, and attained the following autocloning results by proper combination of PM and ECR sputtering.

Keywords

optical multilayers; photonic crystals; silicon; silicon compounds; sputter deposition; ECR sputtering; RF sputtering; Si-SiO/sub 2/; Si-SiO/sub 2/ multilayer film; autocloning technology; fabrication process; photonic crystal; planar magnetron sputtering; sputter etching; three-dimensional periodic structure; wavy-shape substrate; Magnetic multilayers; Nonhomogeneous media; Optical device fabrication; Optical devices; Optical films; Optical losses; Photonic crystals; Radio frequency; Shape; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-031-3

Type

conf

DOI

10.1109/IMNC.2002.1178559

Filename

1178559