Title :
Enhancement of EUV reflective multilayer properties by the insertion of Ru barrier layer
Author :
Seung Yoon Lee ; Tae Geun Kim ; Hyung Jun Kim ; Jinho Ahn
Author_Institution :
Div. of Mater. Sci. & Eng., Hanyang Univ., Seoul, South Korea
Abstract :
Although there are several ways to ensure the high throughput of EUVL process, increasing the EUV reflectivity of the multilayer mirror might be the simplest but still efficient solution for that. Many works to enhance the multilayer reflectivity have been reported and a good deal of them is related to the addition of barrier layers, such as B/sub 4/C and C into Mo/Si multilayer stack. Also, there was a try of sub-multilayering of Mo with Ru insertion to reduce the multilayer stress. In our experiment, we inserted Ru into Mo/Si multilayer to improve the optical property.
Keywords :
mirrors; molybdenum; optical multilayers; reflectivity; ruthenium; silicon; ultraviolet lithography; EUV lithography; Mo-Ru-Si; Mo/Si multilayer mirror; Ru barrier layer; optical properties; reflectivity; Materials science and technology; Mirrors; Nonhomogeneous media; Occupational stress; Optical materials; Reflectivity; Stacking; Throughput; Ultraviolet sources; X-ray scattering;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178564