DocumentCode :
3164453
Title :
Heat sink dependency of mask in-plane displacement for extreme ultraviolet lithography
Author :
Chiba, A. ; Sugawara, M. ; Yamanashi, H. ; Nishiyama, I.
Author_Institution :
ASET EUV Process Lab., Kanagawa, Japan
fYear :
2002
fDate :
6-8 Nov. 2002
Firstpage :
104
Lastpage :
105
Abstract :
Heat transfer of radiation and conduction occurs simultaneously in an interface between mask rear surface and mask stage in an exposure tool due to surface roughness or gap caused by pin chucking. Mask stage acts as a heat sink to maintain mask performance during exposure of extreme ultraviolet (EUV). Clarification of the heat sink dependence on contact area gives useful guideline for designing an exposure system and for developing EUV mask and exposure tool. In this study, thermally induced in-plane displacement (IPD) of EUV mask in contact with heat sink of mask stage was predicted by simulation model.
Keywords :
heat sinks; masks; ultraviolet lithography; contact area; exposure system; extreme ultraviolet lithography; heat conduction; heat radiation; heat sink; heat transfer; mask in-plane displacement; pin chucking; surface roughness; Fluctuations; Heat sinks; Research and development; Research and development management; Temperature; Ultraviolet sources;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
Type :
conf
DOI :
10.1109/IMNC.2002.1178565
Filename :
1178565
Link To Document :
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