Frame interline transfer CCD sensor for HDTV camera

Author

Nobusada, T. ; Azuma, M. ; Toyoda, H. ; Kuroda, T. ; Horii, K. ; Otsuki, T. ; Kano, G.

Author_Institution

Matsushita Electron. Corp., Osaka, Japan

fYear

1989

fDate

15-17 Feb. 1989

Firstpage

88

Lastpage

89

Abstract

The authors describe the development of a HDTV (high-definition television) CCD (charge-coupled device) imager meeting the requirements for a practical color TV camera implemented with three CCD chips. They present a frame interline transfer CCD image sensor (FIT CCD), with 1258(H)*1035(V) pixels, that uses a poly-Si/Al double-layer transfer gate and p/sup +/-floating-island isolation. The saturation current of the present FIT CCD is 900 nA up to 625 kHz, whereas that of the conventional FIT CCD is fairly poor even at 300 kHz. The high transfer speed results from reduction of gate resistance. The photoconversion characteristics measured at a transfer frequency of 625 kHz show that the sensitivity reaches 50 nA/lx. The measured characteristics of the image sensor meet practical HDTV three-chip camera requirements.<>

Keywords

CCD image sensors; colour television cameras; high definition television; 1035 pixel; 1258 pixel; 1302030 pixel; 625 kHz; 900 nA; CCD image sensor; HDTV camera; Si-Al; charge-coupled device; color TV camera; frame interline transfer; high-definition television; p/sup +/-floating-island isolation; photoconversion characteristics; poly-Si/Al double-layer transfer gate; saturation current; three-chip camera requirements; Charge coupled devices; Charge-coupled image sensors; Dynamic range; HDTV; Image resolution; Image sensors; Image storage; Pixel; TV; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1989. Digest of Technical Papers. 36th ISSCC., 1989 IEEE International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/ISSCC.1989.48193

Filename

48193