A 1/3" format image sensor with refractory metal light shield for color video applications

Author

Losee, D.L. ; Cassidy, J.C. ; Mehra, M. ; Nelson, E.T. ; Burkey, B.C. ; Geisbuesch, G. ; Hawkins, G.A. ; Khosla, R.P. ; Lavine, J.P. ; McColgin, W.C. ; Trabka, E.A. ; Weiss, A.K.

Author_Institution

Eastman Kodak Co., Rochester, NY, USA

fYear

1989

fDate

15-17 Feb. 1989

Firstpage

90

Lastpage

91

Abstract

The authors report results obtained on a full-color interline transfer CCD (charged-coupled device) image sensor with pixel dimensions of 8.6 mu m(H)*6.8 mu m(V) using 1.2- mu m design rules and a two-phase, single-polysilicon-per-phase technology. In order to reduce image smear and to provide suitable topography for integral color filters, a refractory light shield with a flowed glass overlayer was incorporated. The basic sensor and pixel architecture is shown. Image smear as a percent of full well, measured with 10% vertical illumination at saturated intensity, is shown as a function of wavelength. Smear is lowest at short wavelengths but is at an acceptable level for applications with controlled illumination.<>

Keywords

CCD image sensors; video equipment; 0.333 in; 1.2 micron; 6.8 micron; 8.6 micron; charged-coupled device; color video applications; flowed glass overlayer; image sensor; image smear; integral color filters; interline transfer CCD; pixel architecture; refractory metal light shield; single-polysilicon-per-phase technology; two-phase; Electrons; Filters; Glass; Image sensors; Optical refraction; Optical surface waves; Photodiodes; Pixel; Sensor arrays; Shift registers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1989. Digest of Technical Papers. 36th ISSCC., 1989 IEEE International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/ISSCC.1989.48194

Filename

48194