DocumentCode :
316457
Title :
Fabrication of Si Field Emitters with Gate using Anodization
Author :
Higa, Katsuya ; Nishii, Kiyoaki ; Asano, Tanemasa
Author_Institution :
Center for Microelectronic Systems, Kyushu Institute of Technology
fYear :
1997
fDate :
17-21 Aug. 1997
Firstpage :
78
Lastpage :
82
Keywords :
Annealing; Chemicals; Conductivity; Current density; Dry etching; Fabrication; Field emitter arrays; Shape control; Silicon; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International
Conference_Location :
Kyongju, Korea
Print_ISBN :
0-7803-3786-7
Type :
conf
DOI :
10.1109/IVMC.1997.627392
Filename :
627392
Link To Document :
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