A design of 700 MHz frequency band LTE receiver front-end with 65 nm CMOS process

Author

Hwang, Hyeonseok ; Yoo, Hyunhwan ; Kim, Munsun ; Na, Yoosam

Author_Institution

UM Solution Team 314, Samsung Electro-Mech., Suwon, South Korea

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

720

Lastpage

723

Abstract

A receiver front-end of LTE (long term evolution) at 700 MHz frequency band is proposed. Linearity and noise figure is key parameter of LTE receiver specified by test cases described in 3GPP standard. From the analysis of the specification of LTE, LNA and mixer circuits are comprised. Two types of LNA are implemented depending on the external SAW usage. Both LNAs show 18.75 dB gain, 1.5 dB NF and -0.1 dBm IIP3. The mixer is designed based on active type with current injection method to increase IIP2 performance. It shows 15.4 dB gain, 6.4 dB NF and 0.5 dBm IIP3. All the circuits are designed in 65 nm CMOS process with 1.8 V supply. The measurements of whole receiver chain show -34.8 dB EVM at 64-QAM modulation and 3.2 dB system NF.

Keywords

3G mobile communication; CMOS integrated circuits; UHF mixers; quadrature amplitude modulation; radio receivers; 3GPP standard; CMOS process; IIP2 performance; LNA; LTE receiver; QAM modulation; external SAW; frequency 700 MHz; gain 1.5 dB; gain 15.4 dB; gain 18.75 dB; gain 6.4 dB; long term evolution; mixer circuits; CMOS process; Circuit testing; Frequency; Gain; Linearity; Long Term Evolution; Noise measurement; Radiofrequency integrated circuits; Surface acoustic waves; Transceivers; CMOS; Front-end; LNA; LTE; Mixer; receiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5384241

Filename

5384241