DocumentCode :
3164585
Title :
Estimation of optimum EPL mask biases in consideration of Coulomb beam blur
Author :
Kobinata, H. ; Yamada, Y. ; Tamura, T. ; Fujii, K. ; Narihiro, M. ; Ochiai, Y.
Author_Institution :
ULSI Device Dev. Div., NEC Corp., Kanagawa, Japan
fYear :
2002
fDate :
6-8 Nov. 2002
Firstpage :
114
Lastpage :
115
Abstract :
The authors discuss the dependence of the beam blur on the pattern density and estimate the amount of mask bias required to correct the proximity effect in consideration of the beam blur difference in electron-beam projection lithography.
Keywords :
electron beam focusing; electron beam lithography; proximity effect (lithography); Coulomb beam blur; electron-beam projection lithography; optimum EPL mask bias; pattern density; proximity effect; Acceleration; Current density; Lithography; National electric code; Page description languages; Particle beams; Proximity effect; Silicon; Ultra large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
Type :
conf
DOI :
10.1109/IMNC.2002.1178570
Filename :
1178570
Link To Document :
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