Title :
Fabrication of Fin-type double-gate MOSFET (FXMOS) structure by orientation-dependent etching and electron beam lithography
Author :
Liu, Y.X. ; Ishii, K. ; Tsutsumi, T. ; Masahara, M. ; Takashima, H. ; Suzuki, E.
Author_Institution :
Nanoelectronics Res. Inst., Agency of Ind. Sci. & Technol., Ibaraki, Japan
Abstract :
The authors have developed the elemental technologies e.g., the narrow Si-Fin formation by orientation-dependent etching and EB-lithography with nanoscale alignment precision for FXMOS fabrication. High performance is expected in the proposed FXMOS device.
Keywords :
MOSFET; electron beam lithography; elemental semiconductors; etching; nanolithography; silicon; FXMOS device performance; FXMOS fabrication; Fin-type double-gate MOSFET; Si; electron beam lithography; nanoscale alignment precision; narrow Si-Fin formation; orientation-dependent etching; Electron beams; Epitaxial layers; Fabrication; Lithography; MOSFET circuits; Nanoscale devices; Nanostructures; Resists; Shape; Wet etching;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178574
