• DocumentCode
    3164713
  • Title

    Fabrication of Fin-type double-gate MOSFET (FXMOS) structure by orientation-dependent etching and electron beam lithography

  • Author

    Liu, Y.X. ; Ishii, K. ; Tsutsumi, T. ; Masahara, M. ; Takashima, H. ; Suzuki, E.

  • Author_Institution
    Nanoelectronics Res. Inst., Agency of Ind. Sci. & Technol., Ibaraki, Japan
  • fYear
    2002
  • fDate
    6-8 Nov. 2002
  • Firstpage
    122
  • Lastpage
    123
  • Abstract
    The authors have developed the elemental technologies e.g., the narrow Si-Fin formation by orientation-dependent etching and EB-lithography with nanoscale alignment precision for FXMOS fabrication. High performance is expected in the proposed FXMOS device.
  • Keywords
    MOSFET; electron beam lithography; elemental semiconductors; etching; nanolithography; silicon; FXMOS device performance; FXMOS fabrication; Fin-type double-gate MOSFET; Si; electron beam lithography; nanoscale alignment precision; narrow Si-Fin formation; orientation-dependent etching; Electron beams; Epitaxial layers; Fabrication; Lithography; MOSFET circuits; Nanoscale devices; Nanostructures; Resists; Shape; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-031-3
  • Type

    conf

  • DOI
    10.1109/IMNC.2002.1178574
  • Filename
    1178574
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3164713