Notice of RetractionModeling and simulation on Ga1−xInxAs ternary alloys system

Notice of Retraction

After careful and considered review of the content of this paper by a duly constituted expert committee, this paper has been found to be in violation of IEEE´s Publication Principles.

We hereby retract the content of this paper. Reasonable effort should be made to remove all past references to this paper.

The presenting author of this paper has the option to appeal this decision by contacting TPII@ieee.org.

For the GaInAs ternary alloys rich In, the manufacturing technology has become mature, but there is still large space for the research on the modeling of their physical characteristics. For example, nowadays there is little theoretical study at home and abroad on the relationship among the material band gap related directly to emitting wavelength, the lattice constant, bond lengths, and components, but since these physical properties have a certain impact on the craft itself, this paper uses the Materials Studio Software based on first principles to analyze the relationships among the band gaps and their corresponding lattice constant, the bond length and the components, and verifies the simulated values. The results show that the simulated values of the above physical parameters and components comply with Vegard´s law, and there is little non-linear deviation.