DocumentCode
3164759
Title
Investigation on the degradation of MOSFETs characteristics due to localized Cu contamination
Author
Youn-Jang Kim ; Ohyun Kim
Author_Institution
Dept. of Electron. & Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea
fYear
2002
fDate
6-8 Nov. 2002
Firstpage
126
Lastpage
127
Abstract
In this paper, we investigated the effects of localized copper contamination by thermal treatment and observed the degradation of MOSFETs by ac stress.
Keywords
MOSFET; copper; heat treatment; semiconductor device metallisation; surface contamination; AC stress; Cu; MOSFET; device degradation; localized Cu contamination; metallization; thermal treatment; Aluminum; Contamination; Copper; Degradation; Dielectrics; Electric resistance; Etching; Interface states; MOSFETs; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-031-3
Type
conf
DOI
10.1109/IMNC.2002.1178576
Filename
1178576
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