Title :
Investigation on the degradation of MOSFETs characteristics due to localized Cu contamination
Author :
Youn-Jang Kim ; Ohyun Kim
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea
Abstract :
In this paper, we investigated the effects of localized copper contamination by thermal treatment and observed the degradation of MOSFETs by ac stress.
Keywords :
MOSFET; copper; heat treatment; semiconductor device metallisation; surface contamination; AC stress; Cu; MOSFET; device degradation; localized Cu contamination; metallization; thermal treatment; Aluminum; Contamination; Copper; Degradation; Dielectrics; Electric resistance; Etching; Interface states; MOSFETs; Thermal stresses;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178576
