Oxide-nitride-oxide antifuse reliability

Author

Chiang, Steve ; Wang, Roger ; Chen, Jacob ; Hayes, Ken ; Lum, John McCol ; Hamdy, Esmat ; Hu, Chenming

Author_Institution

Actel Corp., Sunnyvale, CA, USA

fYear

1990

fDate

27-29 March 1990

Firstpage

186

Lastpage

192

Abstract

Compact, low-resistance oxide-nitride-oxide (ONO) antifuses are studied for time-dependent dielectric breakdown (TDDB), program disturb, programmed antifuse resistance stability, and effective screen. ONO antifuses are superior to oxide antifuses. No ONO antifuse failures were observed in 1.8 million accelerated burn-in device-hours accumulated on 1108 product units. This is in agreement with the 1/E field acceleration model.<>

Keywords

CMOS integrated circuits; EPROM; dielectric thin films; environmental testing; integrated circuit technology; life testing; logic arrays; reliability; silicon compounds; FPGA; ONO antifuses; SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/ antifuses; TDDB; accelerated burn-in; acceleration model; antifuse reliability; low resistance antifuses; oxide antifuses; programmed antifuse resistance stability; time-dependent dielectric breakdown; Acceleration; Complexity theory; EPROM; Electric resistance; Field programmable gate arrays; Integrated circuit interconnections; Jacobian matrices; Materials reliability; Routing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1990. 28th Annual Proceedings., International

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/RELPHY.1990.66084

Filename

66084