Title :
Oxide-nitride-oxide antifuse reliability
Author :
Chiang, Steve ; Wang, Roger ; Chen, Jacob ; Hayes, Ken ; Lum, John McCol ; Hamdy, Esmat ; Hu, Chenming
Author_Institution :
Actel Corp., Sunnyvale, CA, USA
Abstract :
Compact, low-resistance oxide-nitride-oxide (ONO) antifuses are studied for time-dependent dielectric breakdown (TDDB), program disturb, programmed antifuse resistance stability, and effective screen. ONO antifuses are superior to oxide antifuses. No ONO antifuse failures were observed in 1.8 million accelerated burn-in device-hours accumulated on 1108 product units. This is in agreement with the 1/E field acceleration model.<>
Keywords :
CMOS integrated circuits; EPROM; dielectric thin films; environmental testing; integrated circuit technology; life testing; logic arrays; reliability; silicon compounds; FPGA; ONO antifuses; SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/ antifuses; TDDB; accelerated burn-in; acceleration model; antifuse reliability; low resistance antifuses; oxide antifuses; programmed antifuse resistance stability; time-dependent dielectric breakdown; Acceleration; Complexity theory; EPROM; Electric resistance; Field programmable gate arrays; Integrated circuit interconnections; Jacobian matrices; Materials reliability; Routing; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/RELPHY.1990.66084
