Title :
The Gated, Single-Tip Silicon Field Emitter as a Probe for Investigating the Defect Dynamics of Thin Insulators
Author_Institution :
Sarnoff Corporation
Keywords :
Delay; Etching; Fluctuations; Insulation; MOS devices; Metal-insulator structures; Probes; Resists; Silicon; Testing;
Conference_Titel :
Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International
Conference_Location :
Kyongju, Korea
Print_ISBN :
0-7803-3786-7
DOI :
10.1109/IVMC.1997.627513
