Title :
The tunable bandgap of AB-stacking bilayer graphene under the applied electric fields for power devices
Author :
Yan, Liu ; Wang, Wenbo ; Wan, Tao ; Guo, Qing ; Sheng, Kuang ; Yu, Bin
Author_Institution :
Second Affiliated Hosp. Zhejiang Univ. Coll. of Med., Zhejiang Univ., Hangzhou, China
Abstract :
AB-stacked bilayer graphene sheet (BLG) under the electric field is investigated by ab initio calculation in the paper. The interlayer distance between the two layers, band structures, density of sates, and atomic charges of the system are investigated in the presence of different electric fields normal to the BLG. AB-stacked BLG is able to tune the bandgap into 0.234eV while the external electronic field is 1V/nm, Under great electric field, the AB-stacked graphene is still stable and its bandgap is tuned to around 0.45eV. It shows the potential usage of graphene-based devices for power devices.
Keywords :
ab initio calculations; band structure; electric fields; electronic density of states; energy gap; graphene; stacking; AB-stacking bilayer graphene sheet; C; SiO2; ab initio calculation; applied electric fields; atomic charges; band structure; density of states; electronic field; graphene-based device; power devices; tunable bandgap; Atomic layer deposition; Carbon; Diamond-like carbon; Doping; Electric fields; Photonic band gap; Substrates; electrical field; graphene; power devices;
Conference_Titel :
Artificial Intelligence, Management Science and Electronic Commerce (AIMSEC), 2011 2nd International Conference on
Conference_Location :
Deng Leng
Print_ISBN :
978-1-4577-0535-9
DOI :
10.1109/AIMSEC.2011.6010143
