Title :
Facet formation of uniform InAs quantum dots by molecular beam epitaxy
Author :
Kaizu, T. ; Yamaguchi, K.
Author_Institution :
Dept. of Electron. Eng., Univ. of Electro-Commun., Chofu, Japan
Abstract :
Self-assembled quantum dots (QDs) formed during the Stranski-Krastanov (SK) growth has been expected for applications to optoelectronic devices. However, the formation mechanism of the SK QDs has not been understood clearly Recently, we have reported about self size-limiting (SSL) behavior of the InAs 3-dimensional (3D) islands during the SK growth. The SSL process is due to a stable facet formation and plays an important role of the fabrication of uniform QDs. The SSL growth of the SK dots occurs under relatively low arsenic pressure and low growth rate conditions. From these results, we successfully achieved uniform InAs QDs, which revealed a narrow photoluminescence (PL) linewidth of less than 20 meV. In this study, the facet formation of the uniform InAs QDs was investigated in detail by using reflection high-energy electron-beam diffraction (RHEED) and atomic force microscope (AFM). Obtained results clarified the SSL feature during the formation of the SK 3D dots.
Keywords :
III-V semiconductors; atomic force microscopy; indium compounds; molecular beam epitaxial growth; photoluminescence; reflection high energy electron diffraction; semiconductor growth; semiconductor quantum dots; 20 meV; AFM; InAs; RHEED; Stranski-Krastanov growth; facet formation; molecular beam epitaxy; narrow photoluminescence linewidth; self-assembled quantum dots; uniform InAs quantum dots; Atomic force microscopy; Gallium arsenide; Indium; Molecular beam epitaxial growth; Photoluminescence; Quantum dots; Shape; Substrates; Temperature; US Department of Transportation;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178586