DocumentCode :
316503
Title :
Theoretical Study of Field Emission from GaN
Author :
Chung, M.S. ; Yoon, B. G. ; Park, J. M.
Author_Institution :
Department of Physics, University of Ulsan
fYear :
1997
fDate :
17-21 Aug. 1997
Firstpage :
305
Lastpage :
309
Keywords :
Doping; Electric breakdown; Electrodes; Electron emission; Gallium nitride; III-V semiconductor materials; Physics; Poisson equations; Semiconductor device breakdown; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International
Conference_Location :
Kyongju, Korea
Print_ISBN :
0-7803-3786-7
Type :
conf
DOI :
10.1109/IVMC.1997.627572
Filename :
627572
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=316503
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