DocumentCode :
316507
Title :
Monte carlo simulations of carrier transport in diamond and GaN thin films: The effect of dislocations and electron interactions
Author :
Miskovsky, N.M. ; Lerner, P.B. ; Cutler, P.H.
Author_Institution :
Physics Department, Penn State University
fYear :
1997
fDate :
17-21 Aug. 1997
Firstpage :
326
Lastpage :
330
Keywords :
Charge carrier processes; Electron optics; Gallium nitride; Monte Carlo methods; Optical films; Optical scattering; Particle scattering; Phonons; Stimulated emission; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International
Conference_Location :
Kyongju, Korea
Print_ISBN :
0-7803-3786-7
Type :
conf
DOI :
10.1109/IVMC.1997.627585
Filename :
627585
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=316507
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