Formation of Mo Silicide on Poly-Si Field Emitters for Improved Emission Stability

Author

Uh, Hyung Soo ; Park, Byung Gook ; Lee, Jong Duk

Author_Institution

Inter-University Semiconductor Research Center(lSRC), Seoul National University

fYear

1997

fDate

17-21 Aug. 1997

Firstpage

371

Lastpage

375

Keywords

Annealing; Gases; Oxidation; Silicides; Silicon; Stability; Surface contamination; Surface morphology; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International

Conference_Location

Kyongju, Korea

Print_ISBN

0-7803-3786-7

Type

DOI

10.1109/IVMC.1997.627598

Filename

627598

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