DocumentCode
3165458
Title
Silicon Micromachined W-Band Bandpass Filter Using DRIE Technique
Author
Li, Yuan ; Kirby, Pete L. ; Papapolymerou, John
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fYear
2006
fDate
10-15 Sept. 2006
Firstpage
1271
Lastpage
1273
Abstract
A silicon micromachined W-band 3-pole bandpass filter using deep reactive ion etching technology with stacked silicon substrates is presented for the first time. The dimensions of the waveguide filter are calculated based on EM theory and optimized using the Ansoft HFSS 9.2 full wave simulator. The measured center frequency is 92.45GHz. The passband insertion loss is between 1.1 dB and 1.3 dB. The measured bandwidth is 4.83%. The attenuation is more than 30dB at 9GHz away from the center frequency
Keywords
band-pass filters; sputter etching; waveguide filters; 1.1 dB; 1.3 dB; 3-pole bandpass filter; 92.45 GHz; Ansoft HFSS 9.2 full wave simulator; DRIE technique; EM theory; deep reactive ion etching technology; silicon micromachined W-band bandpass filter; stacked silicon substrates; waveguide filter; Attenuation; Band pass filters; Bandwidth; Etching; Filtering theory; Frequency measurement; Insertion loss; Passband; Silicon; Waveguide theory; Deep reactive ion etching; Filter; Micromachining; Waveguide;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2006. 36th European
Conference_Location
Manchester
Print_ISBN
2-9600551-6-0
Type
conf
DOI
10.1109/EUMC.2006.281227
Filename
4058061
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