Title :
Silicon Micromachined W-Band Bandpass Filter Using DRIE Technique
Author :
Li, Yuan ; Kirby, Pete L. ; Papapolymerou, John
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
A silicon micromachined W-band 3-pole bandpass filter using deep reactive ion etching technology with stacked silicon substrates is presented for the first time. The dimensions of the waveguide filter are calculated based on EM theory and optimized using the Ansoft HFSS 9.2 full wave simulator. The measured center frequency is 92.45GHz. The passband insertion loss is between 1.1 dB and 1.3 dB. The measured bandwidth is 4.83%. The attenuation is more than 30dB at 9GHz away from the center frequency
Keywords :
band-pass filters; sputter etching; waveguide filters; 1.1 dB; 1.3 dB; 3-pole bandpass filter; 92.45 GHz; Ansoft HFSS 9.2 full wave simulator; DRIE technique; EM theory; deep reactive ion etching technology; silicon micromachined W-band bandpass filter; stacked silicon substrates; waveguide filter; Attenuation; Band pass filters; Bandwidth; Etching; Filtering theory; Frequency measurement; Insertion loss; Passband; Silicon; Waveguide theory; Deep reactive ion etching; Filter; Micromachining; Waveguide;
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281227
