Title :
Fabrication of nano electron source using beam assisted process
Author :
Murakami, K. ; Jarupoonphol, W. ; Sakata, K. ; Takai, M.
Author_Institution :
Res. Center for Mater. Sci. at Extreme Conditions, Osaka Univ., Japan
Abstract :
Fabrication of a field emission electron source is a basic technology for vacuum micro electronics. There are various types of field emitter such as Spindt-type, Si-type, etc. Most of the electron sources have been fabricated using semiconductor process. In this study, a nano electron source has been fabricated using beam-assisted maskless processes. These processes use physical and chemical, reactions by electron beam (EB) or focused ion beam (FIB) with a Ga liquid metal ion source, moreover, a gate diameter and an emitter height can freely be fabricated using these processes.
Keywords :
electron beam applications; electron field emission; electron sources; focused ion beam technology; nanotechnology; vacuum microelectronics; Ga liquid metal ion source; beam-assisted maskless process; electron beam; fabrication process; field emission electron source; focused ion beam; nano electron source; vacuum microelectronics; Atmosphere; Atmospheric measurements; Chemical technology; Electron beams; Electron sources; Fabrication; Insulation; Materials science and technology; Vacuum technology; Wiring;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178610