Wavelength dependence of UV laser cleaning for silicon field emitter arrays

Author

Kanazawa, Y. ; Sawada, A. ; Zhao, W.J. ; Jarupoonphol, W. ; Takai, M.

Author_Institution

Res. Center for Mater. Sci. at Extreme Conditions, Osaka Univ., Japan

fYear

2002

fDate

6-8 Nov. 2002

Firstpage

196

Lastpage

197

Abstract

Field emitter arrays (FEAs) for the flat panel display with high brightness and resolution have drawn much attention as one of the application in vacuum micro electronics. Emission characteristics of FEAs become worth when molecules adsorb on the tip surface. In this study, the desorption of various molecules using an ultra violet (UV) laser has been tried to improve the emission characteristics. The laser photon energy was close to or slightly higher than the binding energies of contaminants. Therefore the photons can directly dissociate the contaminants from the surface and improve the emission characteristics.

Keywords

electron field emission; elemental semiconductors; laser materials processing; silicon; surface cleaning; vacuum microelectronics; Si; UV laser cleaning; binding energy; contaminant dissociation; molecular desorption; silicon field emitter array; vacuum microelectronics; wavelength dependence; Cleaning; Field emitter arrays; Gas lasers; Laser theory; Materials science and technology; Optical arrays; Silicon; Surface contamination; Surface emitting lasers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-031-3

Type

conf

DOI

10.1109/IMNC.2002.1178611

Filename

1178611