Title :
Fabrication of a GaAs emitter with a high aspect ratio for generation of prebunched electron beam using Gunn effect
Author :
Hasegawa, H. ; Mimura, H. ; Yokoo, K.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
The fabrication process-flowchart of the GaAs emitter with a high aspect ratio is examined. The starting material is a GaAs epitaxially-grown wafer consisting of a n/sup +/-GaAs cap layer, a n-GaAs active layer and a n/sup +/-GaAs substrate. Firstly a double layer mask consisting of a SiO/sub 2/ layer and a resist layer was formed. Then isotropic etching in H/sub 2/SO/sub 4/-H/sub 2/O/sub 2/-H/sub 2/O solution and vertical reactive ion etching in Cl/sub 2/ plasma took place, followed by a final wet etch to form a sharp tip. The emission characteristics of the emitter thus formed were recorded.
Keywords :
Gunn devices; Gunn effect; III-V semiconductors; cold-cathode tubes; electron beams; electron field emission; etching; gallium arsenide; masks; microwave tubes; particle beam bunching; sputter etching; vacuum microelectronics; Cl/sub 2/; GaAs; GaAs emitter; GaAs epitaxially-grown wafer; Gunn effect; H/sub 2/SO/sub 4/-H/sub 2/O/sub 2/-H/sub 2/O; SiO/sub 2/; SiO/sub 2/ layer; cold cathodes; double layer mask; emission characteristics; fabrication process-flowchart; high aspect ratio; isotropic etching; n-GaAs active layer; n/sup +/-GaAs cap layer; n/sup +/-GaAs substrate; prebunched electron beam; resist layer; vacuum microwave tube; vertical reactive ion etching; Cathodes; Character generation; Diodes; Doping; Electron beams; Etching; Fabrication; Frequency; Gallium arsenide; Gunn devices;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178615
