DocumentCode
3165633
Title
Self-limiting oxidation during growth of very thin oxides on Si[001] surface studied by real-time Auger electron spectroscopy
Author
Takakuwa, Y. ; Kawawa, T.
Author_Institution
Inst. of Multidisciplinary Res. for Adv. Mater., Tohoku Univ., Sendai, Japan
fYear
2002
fDate
6-8 Nov. 2002
Firstpage
208
Lastpage
209
Abstract
The oxide growth kinetics at the initial stage of oxidation on the Si[001] surface was investigated by real-time Auger electron spectroscopy using a grazing-incident electron beam for RHEED observation to clarify the reaction mechanism of self-limiting oxidation observed for growth of oxides as thin as several A at temperatures above 636/spl deg/C.
Keywords
Auger electron spectra; elemental semiconductors; oxidation; reflection high energy electron diffraction; silicon; silicon compounds; 636 degC; RHEED; Si; SiO/sub 2/; Si[001] surface; real-time Auger electron spectroscopy; self-limiting oxidation; very thin oxides growth; Capacitive sensors; Electron beams; Equations; Independent component analysis; Kinetic theory; Oxidation; Pressure measurement; Solid modeling; Spectroscopy; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-031-3
Type
conf
DOI
10.1109/IMNC.2002.1178617
Filename
1178617
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