DocumentCode
316564
Title
Tunneling emission from valence band of Si-MOS electron tunneling cathode
Author
Ikeda, J. ; Yamada, Akimasa ; Okamoto, K.
Author_Institution
R&D Headquarters, Nikon Corporation
fYear
1997
fDate
17-21 Aug. 1997
Firstpage
593
Lastpage
597
Keywords
Cathodes; Diodes; Electric variables measurement; Electron emission; Metal-insulator structures; Microelectronics; Research and development; Scattering; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International
Conference_Location
Kyongju, Korea
Print_ISBN
0-7803-3786-7
Type
conf
DOI
10.1109/IVMC.1997.627657
Filename
627657
Link To Document