Title :
Real time monitoring of initial thermal oxidation on Si[001] surface by synchrotron radiation photoemission spectroscopy
Author :
Yoshigoe, A. ; Moritani, K. ; Teraoka, Y.
Author_Institution :
Synchrotron Radiat. Res. Center, Japan Atomic Energy Res. Inst., Hyogo, Japan
Abstract :
We present the real time observation of oxidation states derived from Si-2p core-level shifts and the oxygen amounts evaluated from O- 1s by using synchrotron radiation photoemission spectroscopy, which was performed during the thermal oxidation utilizing O/sub 2/ gas on Si[001] surface over 855 K substrate temperature regions.
Keywords :
X-ray photoelectron spectra; elemental semiconductors; oxidation; silicon; 855 K; Si; Si-2p core-level shifts; SiO/sub 2/; Si[001] surface; initial thermal oxidation; real time monitoring; synchrotron radiation photoemission spectroscopy; thermal oxidation; Atomic measurements; Chemistry; Kinetic theory; MOSFETs; Oxidation; Photoelectricity; Radiation monitoring; Spectroscopy; Synchrotron radiation; Temperature;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178618
