Title :
A new wafer-bonder of ultra-high precision using surface activated bonding (SAB) concept
Author :
Suga, T. ; Howlader, M.M.R. ; Itoh, T. ; Inaka, C. ; Arai, Y. ; Yamauchi, A.
Author_Institution :
Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan
Abstract :
A robot-controlled wafer bonding machine was developed for the bonding of different sizes of wafers ranging up to 8 inches diameter. The features of this equipment are such that: (1) After the automatic parallel adjustment for 8-inch wafers to a margin of error within ±1 μm, the X, Y, and θ axis alignments are performed, allowing a margin of error within ±0.5 μm in bonding accuracy; and (2) Room-temperature bonding is enabled using the surface activated (SAB) bonding concept. 8-inch diameter silicon wafers ware successfully bonded by the SAB process at room temperature for the first time. Preliminary investigations across the interface using an Infrared camera show that no bubbles are visibly present in the bonding region
Keywords :
wafer bonding; 8 inch; Si; alignment system; automatic parallel adjustment system; infrared camera; robot control; room temperature bonding; surface activated bonding; ultra-high precision wafer bonding machine; Heat transfer; Integrated circuit interconnections; Micromechanical devices; Packaging; Pumps; Silicon; Surface cleaning; Temperature; Vacuum systems; Wafer bonding;
Conference_Titel :
Electronic Components and Technology Conference, 2001. Proceedings., 51st
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-7038-4
DOI :
10.1109/ECTC.2001.927935
