A new wafer-bonder of ultra-high precision using surface activated bonding (SAB) concept

Author

Suga, T. ; Howlader, M.M.R. ; Itoh, T. ; Inaka, C. ; Arai, Y. ; Yamauchi, A.

Author_Institution

Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan

fYear

2001

fDate

2001

Firstpage

1013

Lastpage

1018

Abstract

A robot-controlled wafer bonding machine was developed for the bonding of different sizes of wafers ranging up to 8 inches diameter. The features of this equipment are such that: (1) After the automatic parallel adjustment for 8-inch wafers to a margin of error within ±1 μm, the X, Y, and θ axis alignments are performed, allowing a margin of error within ±0.5 μm in bonding accuracy; and (2) Room-temperature bonding is enabled using the surface activated (SAB) bonding concept. 8-inch diameter silicon wafers ware successfully bonded by the SAB process at room temperature for the first time. Preliminary investigations across the interface using an Infrared camera show that no bubbles are visibly present in the bonding region

Keywords

wafer bonding; 8 inch; Si; alignment system; automatic parallel adjustment system; infrared camera; robot control; room temperature bonding; surface activated bonding; ultra-high precision wafer bonding machine; Heat transfer; Integrated circuit interconnections; Micromechanical devices; Packaging; Pumps; Silicon; Surface cleaning; Temperature; Vacuum systems; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 2001. Proceedings., 51st

Conference_Location

Orlando, FL

ISSN

0569-5503

Print_ISBN

0-7803-7038-4

Type

conf

DOI

10.1109/ECTC.2001.927935

Filename

927935