Title :
GaAs microcrystal growth and its position control by low energy focused ion beam
Author :
Chikyow, T. ; Koguchi, N.
Author_Institution :
Nano Material Res. Labs., Nat. Inst. for Material Sci., Ibaraki, Japan
Abstract :
GaAs microcrystal growth and its position control was demonstrated using a low energy focused ion beam system to fabricate the photonic crystals. Due to the rapid progress in ULSI design and the trend in high density packing, in the near future, the Al or Cu based interconnection system will face a difficulty in the signal flow. For this purpose, the photonic crystal and its application to the optical signal transfer system has been intensively studied. In this system, a crucial point is how to fabricate the ordered and controlled structure which has higher dielectric constant. For this system, imbedded GaAs microcrystals in SiO/sub 2/ are thought to be the best candidate. But the challenging is the position controlling of the GaAs microcrystals. For this purpose, we demonstrate the array of GaAs microcrystals on Si(100) surface with As-termination method.
Keywords :
III-V semiconductors; gallium arsenide; optical transfer function; photonic crystals; semiconductor growth; semiconductor quantum dots; Al based interconnection system; As-termination method; Cu based interconnection system; GaAs; GaAs microcrystal growth; Si; Si(100) surface; SiO/sub 2/; ULSI design; high density packing; low energy focused ion beam; optical signal transfer system; photonic crystal; position control; Crystalline materials; Gallium arsenide; Ion beams; Laboratories; Materials science and technology; Optical interconnections; Photonic crystals; Position control; Signal design; Ultra large scale integration;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178622
