Synthesis of microcrystalline silicon films by plasma enhanced chemical vapor deposition using multiple inductively-coupled-plasma modules with low-inductance antenna

Author

Ebe, A. ; Inami, H. ; Baba, S. ; Yamamoto, N. ; Setsuhara, Y. ; Shoji, T. ; Miyake, S.

Author_Institution

Preventure Program, Japan Sci. & Technol. Corp., Osaka, Japan

fYear

2002

fDate

6-8 Nov. 2002

Firstpage

220

Abstract

Microcrystalline silicon thin films were prepared on glass substrates at low temperature (400/spl deg/C) by plasma enhanced chemical vapor deposition using an inductively-coupled plasma (ICP) source. The ICP source is equipped with four U-shaped internal low-inductance antenna (LIA) units, which are connected in parallel to an RF power generator at 13.56 MHz via a matching network.

Keywords

antennas in plasma; elemental semiconductors; plasma CVD; semiconductor growth; semiconductor thin films; silicon; 13.56 MHz; 400 degC; Si; glass substrate; low inductance antenna; low temperature growth; microcrystalline silicon thin film; multiple inductively coupled plasma modules; plasma enhanced chemical vapor deposition; Chemical vapor deposition; Glass; Plasma chemistry; Plasma sources; Plasma temperature; Radio frequency; Semiconductor films; Semiconductor thin films; Silicon; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-031-3

Type

conf

DOI

10.1109/IMNC.2002.1178623

Filename

1178623