Title :
Development of large-scale inductively coupled plasma source with multiple internal antennas units for synthesis of microcrystalline silicon films
Author :
Baba, S. ; Yamamoto, N. ; Inami, H. ; Ebe, A. ; Setsuhara, Y. ; Shoji, T. ; Miyake, S.
Author_Institution :
Preventure Program, Japan Sci. & Technol. Corp., Osaka, Japan
Abstract :
The authors propose an internal-antenna configuration with multiple low-inductance antenna (LIA) units for production of large-scale high-density ICPs, providing low-voltage operation. Microcrystalline silicon films were grown on glass substrates using silane (SiH/sub 4/) and hydrogen (H/sub 2/) mixture plasmas at a substrate temperature below 773K. The deposited films showed the crystalline phase formation with Raman intensity ratio as high as 8. Relatively uniform distribution is achieved over the large-area substrate.
Keywords :
Raman spectra; crystal microstructure; elemental semiconductors; plasma CVD; plasma sources; semiconductor growth; semiconductor thin films; silicon; spectral line intensity; /spl mu/c-Si films; 773 K; PECVD; Raman intensity; Si; SiH/sub 4/-H/sub 2/; SiH/sub 4/-H/sub 2/ mixture plasma; crystalline phase formation; glass substrates; large-scale high-density ICP; large-scale inductively coupled plasma source; low-inductance antenna units; low-voltage operation; multiple internal antennas units; plasma enhanced chemical vapor deposition; substrate temperature; uniform distribution; Crystallization; Dielectric substrates; Large-scale systems; Nuclear and plasma sciences; Plasma chemistry; Plasma sources; Plasma temperature; Production; Semiconductor films; Silicon;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178624
