A GaAs MESFET 16*8 crosspoint switch

Author

Park, H.M. ; Hyeon Cheoi Ki

Author_Institution

Electron. & Telecommun. Res. Inst., Chungnam, South Korea

fYear

1989

fDate

15-17 Feb. 1989

Firstpage

146

Lastpage

147

Abstract

The authors describe a GaAs 16*8 crosspoint switch that provides nonblocking, broadcast, and memory functions. The maximum data rate of 2.2 Gb/s has been demonstrated with a 137-MHz switch clock. The switch has low power dissipation, low crosstalk noise, and little skew of output data, and is fabricated using standard cells. The block diagram and timing diagram are shown. The switching characteristics of this chip at 2.2 Gb/s data rate are also shown, and the temperature characteristics are summarized.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; data communication equipment; digital communication systems; digital integrated circuits; field effect integrated circuits; gallium arsenide; semiconductor switches; switching circuits; 137 MHz; 2.2 Gbit/s; GaAs; MESFET; broadcast functions; crosspoint switch; low crosstalk noise; low power dissipation; memory functions; nonblocking functions; standard cells; switching characteristics; temperature characteristics; Communication switching; Crosstalk; Delay; Gallium arsenide; MESFETs; Power supplies; Space vector pulse width modulation; Switches; Telecommunication switching; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1989. Digest of Technical Papers. 36th ISSCC., 1989 IEEE International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/ISSCC.1989.48235

Filename

48235