Title :
A GaAs MESFET 16*8 crosspoint switch
Author :
Park, H.M. ; Hyeon Cheoi Ki
Author_Institution :
Electron. & Telecommun. Res. Inst., Chungnam, South Korea
Abstract :
The authors describe a GaAs 16*8 crosspoint switch that provides nonblocking, broadcast, and memory functions. The maximum data rate of 2.2 Gb/s has been demonstrated with a 137-MHz switch clock. The switch has low power dissipation, low crosstalk noise, and little skew of output data, and is fabricated using standard cells. The block diagram and timing diagram are shown. The switching characteristics of this chip at 2.2 Gb/s data rate are also shown, and the temperature characteristics are summarized.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; data communication equipment; digital communication systems; digital integrated circuits; field effect integrated circuits; gallium arsenide; semiconductor switches; switching circuits; 137 MHz; 2.2 Gbit/s; GaAs; MESFET; broadcast functions; crosspoint switch; low crosstalk noise; low power dissipation; memory functions; nonblocking functions; standard cells; switching characteristics; temperature characteristics; Communication switching; Crosstalk; Delay; Gallium arsenide; MESFETs; Power supplies; Space vector pulse width modulation; Switches; Telecommunication switching; Temperature;
Conference_Titel :
Solid-State Circuits Conference, 1989. Digest of Technical Papers. 36th ISSCC., 1989 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1989.48235
