Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling

Author

Paussa, Alan ; Fiori, Gianluca ; Palestri, Pierpaolo ; Geromel, Matteo ; Esseni, David ; Iannaccone, Giuseppe ; Selmi, Luca

Author_Institution

Dipt. di Ing. Elettr. Gestionale e Meccanica, Univ. of Udine, Udine, Italy

Volume

61

Issue

5

fYear

2014

fDate

May-14

Firstpage

1567

Lastpage

1574

Abstract

We assess the analog/RF intrinsic performance of graphene FETs (GFETs) through a semiclassical transport model, including local and remote phonon scattering as well as band-to-band tunneling generation and recombination, validated by comparison with full quantum results over a wide range of bias voltages. We found that scaling is expected to improve the f_T, and that scattering plays a role in reducing both the f_T and the transconductance also in sub-100-nm GFETs. Moreover, we observed a strong degradation of the device performance due to the series resistances and source/drain to channel underlaps.

Keywords

field effect transistors; graphene; semiconductor device models; transport processes; tunnelling; C; RF intrinsic performance; analog performance; band-to-band tunneling; device degradation; device transconductance; graphene FET; local phonon scattering; remote phonon scattering; semiclassical model; semiclassical transport model; Graphene; Logic gates; Mathematical model; Performance evaluation; Phonons; Radio frequency; Scattering; Band-to-band tunneling (BTBT); Boltzmann transport equation; RF transistors; WKB approximation; WKB approximation.; graphene FET (GFET); graphene monolayer; nonequilibrium Green´s function (NEGF);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2307914

Filename

6766206