DocumentCode :
3165917
Title :
Wideband Micromachined Transitions for MEMS Tunable High-Q Filters
Author :
Margomenos, A. ; Lee, Yongshik ; Jain, Alok ; Yao, Terry ; Peroulis, Dimitris ; Katehi, Linda P B
Author_Institution :
Emag Technol., Ann Arbor, MI
fYear :
2006
fDate :
10-15 Sept. 2006
Firstpage :
1336
Lastpage :
1339
Abstract :
Two types of micromachined RF transitions for interconnecting coplanar waveguides (CPW) on silicon to microstrip lines suspended on membranes are presented. These transitions are a critical component for developing MEMS tunable high-Q filters for Ka and U-band applications. Their fabrication is based on a DRIE etching process which provides excellent control of the size and shape of the etched structure, therefore excellent control of the transition´s RF performance. The presented transitions have sufficient bandwidth for covering the 35-55 GHz range within which the MEMS tunable filters is operating
Keywords :
Q-factor; circuit tuning; etching; micromachining; micromechanical devices; microstrip transitions; millimetre wave filters; 35 to 55 GHz; DRIE etching process; Ka-band filters; MEMS tunable filters; RF MEMS varactors; RF performance; U-band applications; coplanar waveguides on silicon; membrane suspended filters; microstrip lines; silicon micromachining; tunable high-Q filters; wideband micromachined RF transitions; Coplanar waveguides; Etching; Filters; Micromechanical devices; Radio frequency; Shape control; Silicon; Size control; Waveguide transitions; Wideband; Membrane suspended filters; RF MEMS Varactors; Silicon micromachining;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
Type :
conf
DOI :
10.1109/EUMC.2006.281263
Filename :
4058079
Link To Document :
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