Analysis for efficiency improvement of CMOS class-E power amplifiers with MEMS inductors

Author

Tsou, Wen-An ; Chen, Che-Sheng ; Wang, Chun-Kai ; Chen, Kevin C J ; Wu, Svu-Hsien ; Wen, Kuei-Ann

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

1683

Lastpage

1686

Abstract

This paper presents an analysis and enhancement of efficiency in a class-E power amplifier using MEMS inductors. The MEMS technology is proposed and demonstrated by a prototype inductor. The model of MEMS inductors is created by HFSS simulator and its simulated result has good match with the measured result. Stacked-metal layer inductors in MEMS process are also developed to increase the quality factor. The simulation result of a CMOS class-E PA with MEMS inductors shows that the increased quality factor of inductors by 2 can improve the PA´s efficiency by 6%. Furthermore, we present a design methodology for optimizing the PA´s efficiency.

Keywords

CMOS integrated circuits; Q-factor; micromechanical devices; power amplifiers; power inductors; CMOS class-E power amplifiers; HFSS simulator; MEMS inductors; microelectromechanical inductors; quality factor; stacked-metal layer inductors; CMOS technology; Circuits; High power amplifiers; Inductance; Inductors; Micromechanical devices; Power amplifiers; Q factor; Radiofrequency amplifiers; Semiconductor device modeling; MEMS; inductors; power amplifiers; power efficiency; quality factor;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5384309

Filename

5384309