Title :
Planarization of SiO/sub 2/ film employing anhydrous HF vapor
Author :
Fukasawa, T. ; Ide, D. ; Horiike, Y.
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Japan
Abstract :
CMP (Chemical mechanical Polishing) is currently used for the planarization of dielectric film in the ULSI multilayer metallization process. However, since CMP requires high loading pressure for a head, the planarization of a low-k porous silica film is not easy due to its fragile characteristic. In this paper, a new planarization method in which a SiO/sub 2/ film is polished softly has been proposed employing an anhydrous HF vapor.
Keywords :
chemical mechanical polishing; dielectric thin films; planarisation; porous materials; silicon compounds; HF; SiO/sub 2/; SiO/sub 2/ film; anhydrous HF vapor; chemical-mechanical polishing; low-k dielectric; planarization process; porous silica film; Atomic layer deposition; Etching; Hafnium; Hydrogen; Planarization; Plasma applications; Resists; Semiconductor device modeling; Semiconductor films; Semiconductor materials;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178632
