• DocumentCode
    3166005
  • Title

    Synchrotron radiation stimulated etching SiO/sub 2/ thin films with a Co contact mask for the area-selective deposition of self-assembled monolayer

  • Author

    Changshun Wang ; Rahman, M. ; Urisu, T.

  • Author_Institution
    Inst. for Molecular Sci., Okazaki, Japan
  • fYear
    2002
  • fDate
    6-8 Nov. 2002
  • Firstpage
    240
  • Lastpage
    241
  • Abstract
    Microfabrication technology has made a considerable impact on recent biotechnological research. The area-selective integration of self-assembled monolayer (SAM) on patterned substrates is important to biosensor fabrications, cell studies, and tissue engineering applications. The combination of them will be an interesting field for many kinds of applications. In this work, synchrotron radiation (SR) stimulated etching was conducted to make the micro-pattern of SiO/sub 2/ thin film with a Co contact mask and the dodecene SAM was deposited on the etched surface area-selectively. From the experimental results, we conclude that Co is suitable to the mask materials in the SR etching, and that the exhibiting patterning technique is suitable for the area-selective deposition of alkyl SAMs.
  • Keywords
    cobalt; etching; insulating thin films; masks; monolayers; organic compounds; self-assembly; semiconductor-insulator boundaries; silicon compounds; Co; Co contact mask; SAM; SiO/sub 2/; SiO/sub 2/ thin films; SiO/sub 2/-Si; alkyl SAMs; area-selective deposition; biosensor fabrications; cell studies; dodecene; micro-pattern; microfabrication technology; patterned substrates; self-assembled monolayer; synchrotron radiation stimulated etching; tissue engineering; Atmospheric measurements; Etching; Hafnium; Scanning electron microscopy; Silicon; Sputtering; Strontium; Surface topography; Synchrotron radiation; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-031-3
  • Type

    conf

  • DOI
    10.1109/IMNC.2002.1178633
  • Filename
    1178633