DocumentCode :
3166005
Title :
Synchrotron radiation stimulated etching SiO/sub 2/ thin films with a Co contact mask for the area-selective deposition of self-assembled monolayer
Author :
Changshun Wang ; Rahman, M. ; Urisu, T.
Author_Institution :
Inst. for Molecular Sci., Okazaki, Japan
fYear :
2002
fDate :
6-8 Nov. 2002
Firstpage :
240
Lastpage :
241
Abstract :
Microfabrication technology has made a considerable impact on recent biotechnological research. The area-selective integration of self-assembled monolayer (SAM) on patterned substrates is important to biosensor fabrications, cell studies, and tissue engineering applications. The combination of them will be an interesting field for many kinds of applications. In this work, synchrotron radiation (SR) stimulated etching was conducted to make the micro-pattern of SiO/sub 2/ thin film with a Co contact mask and the dodecene SAM was deposited on the etched surface area-selectively. From the experimental results, we conclude that Co is suitable to the mask materials in the SR etching, and that the exhibiting patterning technique is suitable for the area-selective deposition of alkyl SAMs.
Keywords :
cobalt; etching; insulating thin films; masks; monolayers; organic compounds; self-assembly; semiconductor-insulator boundaries; silicon compounds; Co; Co contact mask; SAM; SiO/sub 2/; SiO/sub 2/ thin films; SiO/sub 2/-Si; alkyl SAMs; area-selective deposition; biosensor fabrications; cell studies; dodecene; micro-pattern; microfabrication technology; patterned substrates; self-assembled monolayer; synchrotron radiation stimulated etching; tissue engineering; Atmospheric measurements; Etching; Hafnium; Scanning electron microscopy; Silicon; Sputtering; Strontium; Surface topography; Synchrotron radiation; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
Type :
conf
DOI :
10.1109/IMNC.2002.1178633
Filename :
1178633
Link To Document :
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